MC-4R128FKE8D-745中文資料美光科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R128FKE8D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (μPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 bus efficiency. The Direct RDRAMs 32 banks support up to four simultaneous transactions per device.

Features

? 184 edge connector pads with 1mm pad spacing

? 128 MB Direct RDRAM storage

? Each RDRAM? has 32 banks, for 128 banks total on module

? Gold plated contacts

? RDRAMs use Chip Scale Package (CSP)

? Serial Presence Detect support

? Operates from a 2.5 V supply

? Powerdown self refresh modes

? Separate Row and Column buses for higher efficiency

? Over Drive Factor (ODF) support