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MC33284

HIGHPERFORMANCEOPERATIONALAMPLIFIERS

LowInputOffset,HighSlewRate,WideBandwidth,JFETInputOperationalAmplifies TheMC33282/284seriesofhighperformanceoperationalamplifiersarequalityfabricatedwithinnovativebipolarandJFETdesignconcepts.ThisdualandquadamplifierseriesincorporatesJFETinputsalongwith

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE33284

SUPERLOWNOISEHJFET

CEL

California Eastern Labs

NE33284

LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE33284A

LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE33284A

SUPERLOWNOISEHJFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE33284AS

SUPERLOWNOISEHJFET

CEL

California Eastern Labs

NE33284AS

SUPERLOWNOISEHJFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE33284A-SL

LtoXBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    MC33284DR

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

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8650
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21+
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12588
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16+
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NA
29080
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85600
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2023+
SOP14
80000
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50000
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ON/安森美
21+
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30000
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ON/安森美
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更多MC33284DR供應(yīng)商 更新時(shí)間2025-2-14 15:22:00

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