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MCGPR63V477M13X26-RH

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ?Highterminalimpedancesforoptimalbroadbandperformance ?Advancedhighperformancein--packageDoherty ?AbletowithstandextremelyhighoutputVSWRandbroadbandoperating conditions

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCGPR63V477M13X26-RH

N--Channel Enhancement--Mode Lateral MOSFETs

Features ?GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications ?InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCGPR63V477M13X26-RH

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features ?Designedforwideinstantaneousbandwidthap

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCGPR63V477M13X26-RH

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This63wattasymmetricalDohertyRFpowerLDMOStransistorisdesigned forcellularbasestationapplicationsrequiringverywideinstantaneous bandwidthcapabilitycoveringthefrequencyrangeof1805to1880MHz. ?TypicalDohertySingle--Carrier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCGPR63V477M13X26-RH

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MCGPR63V477M13X26-RH

RF Power Field Effect Transistor

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MCGPR63V477M13X26-RH

RF Power LDMOS Transistors

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MCGPR63V477M13X26-RH

RF Power LDMOS Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCGPR63V477M13X26-RH

RF Power LDMOS Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCGPR63V477M13X26-RH

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MCR63V477M13X26

RFPowerFieldEffectTransistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MCGPR63V477M13X26-RH

  • 制造商：

    SPC Multicomp

  • 功能描述：

    CAPACITOR ALUM ELECT 470UF 63V RADIAL

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UnitedChemiCon
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57420
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SMD
5500
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2020+
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80000
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更多MCGPR63V477M13X26-RH供應(yīng)商 更新時(shí)間2024-11-15 15:30:00

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