MCM67M618BFN9中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self–Timed Write

The MCM67M618B is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high–performance, secondary cache for the MC68040 and PowerPC? microprocessors. It is organized as 65,536 words of 18 bits, fabricated using Motorola’s high–performance silicon–gate BiCMOS technology. The device integrates input registers, a 2–bit counter, high speed SRAM, and high drive capability outputs onto a single monolithic circuit for reduced parts count implementation of cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.

? Single 5 V ± 5 Power Supply

? Fast Access Times: 9/10/12 ns Max

? Byte Writeable via Dual Write Strobes

? Internal Input Registers (Address, Data, Control)

? Internally Self–Timed Write Cycle

? TSP, TSC, and BAA Burst Control Pins

? Asynchronous Output Enable Controlled Three–State Outputs

? Common Data Inputs and Data Outputs

? High Board Density 52–PLCC Package

? 3.3 V I/O Compatible