| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
650VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
Silicon650VN-ChannelMOS | NIUHANG Dongguan City Niuhang Electronics Co.LTD | NIUHANG | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
650VN-ChannelEnhancementModeMOSFET FEATURES ?12A,650V,RDS(ON)=0.8?@VGS=10V,ID=6.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
650VN-ChannelEnhancementModeMOSFET FEATURES ?12A,650V,RDS(ON)=0.8?@VGS=10V,ID=6.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET FEATURES RDS(ON) | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-ChannelEnhancementMOSFET Features ?VDS=650V,ID=12A ?RDS(ON)=0.64Ω@VGS=10V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MDD |
23+ |
TO220F |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤 |
詢價(jià) | ||
24+ |
N/A |
70000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
MDD |
2016+ |
BGA |
6523 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
MDD |
24+ |
BGA |
36500 |
原裝現(xiàn)貨/放心購(gòu)買 |
詢價(jià) | ||
MDD |
22+ |
BGA |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
MDD |
22+ |
BGA |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
MODULE |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
INFINEON |
23+ |
7000 |
詢價(jià) | ||||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
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