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MDFS11N60TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDFS11N60TH

N-Channel MOSFET 600V, 11A, 0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP11N60

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP11N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MDP11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDP11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MGP11N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGP11N60ED

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半導體安森美半導體公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

供應商型號品牌批號封裝庫存備注價格
MagnaChip
22+23+
TO-220F
23275
絕對原裝正品全新進口深圳現貨
 詢價
MagnaChip
24+
TO-220F
9860
一級代理
 詢價
MAGNACHIP/美格納
23+
TO-220F
50000
全新原裝正品現貨,支持訂貨
 詢價
TH/韓國太虹
2048+
TO-220F
9851
只做原裝正品現貨!或訂貨假一賠十!
 詢價
MAGNACHIP/美格納
24+
TO-220F
3750
原裝現貨假一賠十
 詢價
MAGNACHIP/美格納
2022
TO-220F
80000
原裝現貨,OEM渠道,歡迎咨詢
 詢價
-
23+
NA
13000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MAGNACHIP/美格納
TO-220F
6406
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
MAGNACHIP/美格納
23+
NA/
3645
原裝現貨,當天可交貨,原型號開票
 詢價
美格納
24+
TO-220F
5000
只做原裝公司現貨
 詢價
更多MDFS11N60TH供應商 更新時間2025-3-15 14:19:00

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