MDP16-46

Thick Film Resistor Networks, Dual-In-Line, Molded DIP

FEATURES ?0.190[4.83mm]maximumseatedheight ?Rugged,moldedcaseconstruction ?Lowtemperaturecoefficient(-55°Cto+125°C), ??MDP1645:±100ppm/°C,MDP1646:±250ppm/°C ?Compatiblewithautomaticinsertionequipment ?Highlystablethickfilm ?ReducesPCboardspaceandreduc

MDP1646D04

Thick Film Resistor Networks, Dual-In-Line, Molded DIP

FEATURES ?0.190[4.83mm]maximumseatedheight ?Rugged,moldedcaseconstruction ?Lowtemperaturecoefficient(-55°Cto+125°C), ??MDP1645:±100ppm/°C,MDP1646:±250ppm/°C ?Compatiblewithautomaticinsertionequipment ?Highlystablethickfilm ?ReducesPCboardspaceandreduc

MDP1646E04

Thick Film Resistor Networks, Dual-In-Line, Molded DIP

FEATURES ?0.190[4.83mm]maximumseatedheight ?Rugged,moldedcaseconstruction ?Lowtemperaturecoefficient(-55°Cto+125°C), ??MDP1645:±100ppm/°C,MDP1646:±250ppm/°C ?Compatiblewithautomaticinsertionequipment ?Highlystablethickfilm ?ReducesPCboardspaceandreduc

MDP16N50GTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP18N50BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP18N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP1901TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP1921TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

MDP1933TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=105A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP1991

Single N-channel Trench MOSFET 100V, 120A, 5.9mΩ

GeneralDescription TheMDP1991usesadvancedMagnachip’sMOSFET Technology,whichprovideshighperformanceinon-state resistance,fastswitchingperformanceandexcellent quality.MDP1991issuitabledeviceforDC/DCConverter andgeneralpurposeapplications. Features ?VDS=100V ?