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MDP1901TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP1921TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP1933TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=105A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP1991

Single N-channel Trench MOSFET 100V, 120A, 5.9mΩ

GeneralDescription TheMDP1991usesadvancedMagnachip’sMOSFET Technology,whichprovideshighperformanceinon-state resistance,fastswitchingperformanceandexcellent quality.MDP1991issuitabledeviceforDC/DCConverter andgeneralpurposeapplications. Features ?VDS=100V ?

MGCHIP

MagnaChip Semiconductor.

MDP1991TH

Single N-channel Trench MOSFET 100V, 120A, 5.9mΩ

GeneralDescription TheMDP1991usesadvancedMagnachip’sMOSFET Technology,whichprovideshighperformanceinon-state resistance,fastswitchingperformanceandexcellent quality.MDP1991issuitabledeviceforDC/DCConverter andgeneralpurposeapplications. Features ?VDS=100V ?

MGCHIP

MagnaChip Semiconductor.

MDP100

Lightning Surge Protectors for Electronics Equipment M-RESTER

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

MDP100T

Lightning Surge Protectors for Electronics Equipment M-RESTER

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

MDP10N027

Single N-channel Trench MOSFET 100V, 120A, 2.8m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP10N027TH

Single N-channel Trench MOSFET 100V, 120A, 2.8m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP10N055

Single N-channel Trench MOSFET 100V, 120A, 5.5m(ohm)

MGCHIP

MagnaChip Semiconductor.

詳細(xì)參數(shù)

  • 型號：

    MDP1

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    CHASSIS

供應(yīng)商型號品牌批號封裝庫存備注價格
DLE
05+
原廠原裝
997
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
PASSIVE
25
DLE
3700
詢價
MAGNACHIP
15+
TO220
12000
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨
 詢價
23+
模塊
120
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
DALE
2016+
DIP14
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
VISHAY
2020+
DIP-16
129
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
DLE
24+
DIP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
MDP
17+
DIP
6200
100%原裝正品現(xiàn)貨
 詢價
DALE
24+
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
DALE
24+
DIP14
500
詢價
更多MDP1供應(yīng)商 更新時間2025-4-22 16:18:00

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