零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ME20P06 | P-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | Motorola Motorola, Inc | Motorola | ||
P??hannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | Motorola Motorola, Inc | Motorola | ||
SWITCHINGP-CHANNELPOWERMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=47m?MAX.(VGS=–10V,ID=–10A) RDS(on)=64m?MAX.(VGS=–5V,ID=–10A) RDS(on)=70m?MAX.(VGS=–4.5V,ID=–10A | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-15A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
松木 |
24+ |
TO-252 |
499811 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
Matsuki |
23+ |
TO-252 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
MT茂鈿 |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
VBsemi(臺(tái)灣微碧) |
2112+ |
TO252 |
105000 |
2500個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨, |
詢價(jià) | ||
MT茂鈿 |
23+ |
TO-252 |
21000 |
公司只做原裝正品 |
詢價(jià) | ||
MATSUKI |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VBsemi |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MATSUKI |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
松木 |
2022+ |
TO-252 |
23010 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
MATSUKI |
23+ |
TO-252 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
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