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ME20P06

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MTD20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MTD20P06

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

Motorola

Motorola, Inc

MTD20P06HDL

P??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD20P06HDL

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

Motorola

Motorola, Inc

NP20P06SLG

SWITCHINGP-CHANNELPOWERMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06SLG

MOSFIELDEFFECTTRANSISTOR

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06SLG

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NP20P06SLG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP20P06YLG

MOSFIELDEFFECTTRANSISTOR

Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=47m?MAX.(VGS=–10V,ID=–10A) RDS(on)=64m?MAX.(VGS=–5V,ID=–10A) RDS(on)=70m?MAX.(VGS=–4.5V,ID=–10A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NTD20P06HD

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NTD20P06L

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-15A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=48mΩ(Max)@VGS=-5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD20P06L

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20P06L

PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20P06L

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20P06L

PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20P06LG

PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD20P06LG

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NTD20P06LG

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTDV20P06L

PowerMOSFET??0V,??5.5A,SingleP??hannel,DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
松木
24+
TO-252
499811
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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Matsuki
23+
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8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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MT茂鈿
20+
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36900
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VBsemi(臺(tái)灣微碧)
2112+
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105000
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MT茂鈿
23+
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21000
公司只做原裝正品
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MATSUKI
23+
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50000
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VBsemi
23+
TO252
50000
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MATSUKI
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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松木
2022+
TO-252
23010
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MATSUKI
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6000
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更多ME20P06供應(yīng)商 更新時(shí)間2024-11-2 10:11:00