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MTH25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM25N10

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM25N10

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP25N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NCEAP25N10AD

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10ADusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP25N10AG

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10AGusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEAP25N10AK

NCEAutomotiveN-ChannelSuperTrenchIIPowerMOSFET

Description TheNCEAP25N10AKusesSuperTrenchIItechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealfor

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

PJD25N10A

100VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD25N10A

100VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@15A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
松木Matsuki
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
MATSUKI
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MATSUKI
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
MATSUKI
23+
NA/
17817
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
UMW
19+
TO-252
83845
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
M
23+
TO-252
10000
公司只做原裝正品
 詢價
M
TO-252
22+
6000
十年配單,只做原裝
 詢價
ON/安森美
23+
TO-252
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MATSUKI
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
M
24+
TO-252
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
更多ME25N10T-G供應(yīng)商 更新時間2022-6-12 10:12:00

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