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MG600

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBAGTRMODULESILICONNCHANNELIGBT HIGHPOWERSWITHCINGAPPLICATIONS. MOTORCONTROLAPPLICATIONS.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600J1US51

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBAGTRMODULESILICONNCHANNELIGBT HIGHPOWERSWITHCINGAPPLICATIONS. MOTORCONTROLAPPLICATIONS.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600J2YS60A

TOSHIBA IGBT Module Silicon N Channel IGBT

HighPowerSwitchingApplications MotorControlApplications ●Integratesacompletehalfbridgepowercircuitandfault-signaloutputcircuitinonepackage.(shortcircuitandovertemperature) ●Theelectrodesareisolatedfromcase. ●Lowthermalresistance ●VCE(sat)=2.1V(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600J2YS61A

Dual IGBTMOD

Description: PowerexDualIGBTMOD?CompactIGBTSeriesModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfiguration,witheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinter

POWEREX

Powerex Power Semiconductors

MG600Q1US41

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBAGTRMODULESILIOCNNCHANNELIGBT HIGHPOWERSWITHCINGAPPLICATIONS. MOTORCONTROLAPPLICATIONS.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600Q1US51

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HighPowerSwitchingApplications MotorControlApplications ●Highinputimpedance ●Highspeed:tf=0.3μs(Max)@Inductiveload ●Lowsaturationvoltage:VCE(sat)=3.6V(Max) ●Enhancement-mode ●Includesacompletehalfbridgeinonepackage. ●Theelectrodesareisolatedfromcase.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600Q1US61

TOSHIBA IGBT Module Silicon N Channel IGBT

HighPowerSwitchingApplications MotorControlApplications ●Highinputimpedance ●Highspeed:tf=0.3μs(max) Inductiveload ●Lowsaturationvoltage:VCE(sat)=2.6V(max) ●Theelectrodesareisolatedfromcase. ●Enhancement-mode

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600Q2YMS3

High-Power Module Silicon Carbide N-Channel MOSFET

Applications ?High-PowerSwitching ?MotorControllers(includingrailtraction) Features (1)VDSS=1200V,ID=600AAllSiCMOSFETModule(Lowloss&Highspeedswitching) (2)Lowstrayinductance,lowthermalresistance,maximumTch=150,builtintemperaturesensor. (3)Enhancement

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600Q2YS60A

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

TOSHIBAIGBTMODULESILICONNCHANNELIGBT HIGHPOWERSWITHCINGAPPLICATIONS MOTORCONTROLAPPLICATIONS ●TheElectrodesareIsolatedfromCase. ●Enhancement?Mode ●ThermalOutputTerminal(TH)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

MG600Q2YS60A

Compact IGBT

Description: PowerexDualIGBTMOD?CompactIGBTSeriesModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfiguration,witheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinter

POWEREX

Powerex Power Semiconductors

詳細(xì)參數(shù)

  • 型號(hào)：

    MG600

  • 制造商：

    TOSHIBA

  • 制造商全稱：

    Toshiba Semiconductor

  • 功能描述：

    N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CTCCERATECHCORPORATIONMADEINKO
60OHMHB1M160
HB-1M1608-600JT
60000
全新原裝現(xiàn)貨 樣品可售
 詢價(jià)
TOSHIBA
23+
模塊
450
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
MIT
2016+
模塊
6528
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品!
 詢價(jià)
24+
40
正反極配對(duì)
 詢價(jià)
IGBT
23+
模塊
3562
詢價(jià)
東芝
24+
模塊
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
PowerexInc
23+
IGBTMODCMPCT1200V600A
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
TOSHIBA
10+
東芝正品
2000
全新原裝,公司現(xiàn)貨供應(yīng),絕對(duì)正品
 詢價(jià)
MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
TOSHIBA型號(hào)(1U600V)IGBT
23+
NA
8000
全新原裝假一賠十
 詢價(jià)
更多MG600供應(yīng)商 更新時(shí)間2025-4-10 17:10:00

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