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MI2500RU

Compact,25W,4:1InputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

MI2500RU

Compact,1x1Inch25W,4:1InputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

MI2500RW

Compact,1x1Inch25W,2:1InputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

MI2500RW

Compact,25W,2:1InputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

MJ2500

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJ2500

10AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.80VOLTS150WATTS

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ2500

COMPLEMENTARYPOWERDARLINGTONS

COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30

COMSET

Comset Semiconductor

MJ2500

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3package ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeMJ3000/3001 APPLICATIONS ·Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

SAVANTIC

Savantic, Inc.

MJ2500

iscSiliconPNPDarlingtionPowerTransistor

DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgain hFE=1000(Min)@IC=-5A ·Collector-EmitterBreakdownVoltage V(BR)CEO=-60V(Min) ·ComplementtotypeMJ3000 APPLICATIONS ·Designedforuseasoutputdevicesincomplementarygeneralpurpose

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJ2500

Siliconcomplementarytrasistorspowerdarlington

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

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