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20N40

400V,23AN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

20N40H

20A竊?00VN-CHANNELMOSFET

KIAKIA Semiconductor Technology

可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司

20N40K-MT

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

AOTF20N40

400V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF20N40

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDH20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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ON/安森美
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SOT-263
35200
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22+
SOT-263
12245
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23+
SOT-263
10000
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14+
SOT-263
880000
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TO220
58000
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MC
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9
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2022+
5
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NA
8800
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