MGC15N35CL中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

Internally Clamped N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

? Gate–Emitter ESD Protection

? Temperature Compensated Gate–Collector Voltage Clamp Limits Stress Applied to Load

? Integrated ESD Diode Protection

? Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices

? Low Saturation Voltage

? High Pulsed Current Capability

? Optional Gate Resistor (RG)