MGJ1D121503SC中文資料村田數(shù)據(jù)手冊PDF規(guī)格書

Optimised bipolar output voltages for IGBT/

Mosfet, SiC & GaN gate drives

Reinforced insulation to UL62368-1

recognised

ANSI/AAMI ES60601-1, 1 MOPP/2 MOOPs

pending

5.2kVDC isolation test voltage ‘Hi Pot Test’

Ultra low isolation capacitance

5V, 12V, 15V & 24V inputs

6V/-3V, +15V/-3V, +15V/-5V, +15V/-9V,

18V/-2.5V & +20V/-5V outputs

Operation to 105°C

Characterised CMTI >200kV/uS

Continuous barrier withstand voltage

2.4kVDC

Characterised partial discharge performance