MGP4N60E中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
MGP4N60E規(guī)格書詳情
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 55 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V
? Low On–Voltage 2.0 V typical at 3.0 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號：
MGP4N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RAYCHEM |
SMD |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
TE/泰科 |
2420+ |
/ |
127845 |
一級代理,原裝正品! |
詢價(jià) | ||
ON |
24+ |
90000 |
詢價(jià) | ||||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-220 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
24+ |
N/A |
51000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
TE |
ROHS |
8560 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
ON/安森美 |
22+ |
TO |
99651 |
詢價(jià) |
