MGP7N60E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
MGP7N60E |
| 功能描述 | Insulated Gate Bipolar Transistor |
| 文件大小 |
122.09 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | Motorola, Inc |
| 企業(yè)簡稱 |
Motorola【摩托羅拉】 |
| 中文名稱 | 加爾文制造公司官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-3-13 17:46:00 |
| 人工找貨 | MGP7N60E價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MGP7N60E規(guī)格書詳情
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 60 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V
? Low On–Voltage 2.0 V typical at 5.0 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號：
MGP7N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ONS
- 功能描述：
ON SEMICONDUCTOR NXA5C
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
2017+ |
SMD |
6528 |
只做原裝正品假一賠十! |
詢價 | |||
ON/安森美 |
23+ |
TO |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
TE |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
TE/泰科 |
2452+ |
/ |
473077 |
一級代理,原裝正品現(xiàn)貨 |
詢價 | ||
SMCCorporation |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
ON |
24+ |
90000 |
詢價 | ||||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
ON/安森美 |
23+ |
TO |
6000 |
原裝正品，支持實(shí)單 |
詢價 | ||
ON |
24+ |
TO |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
ON/安森美 |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價 |
