MGP7N60E中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書
MGP7N60E規(guī)格書詳情
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 70 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V
? Low On–Voltage 2.0 V typical at 5.0 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產品屬性
- 型號：
MGP7N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ONS
- 功能描述：
ON SEMICONDUCTOR NXA5C
- 制造商：
ON Semiconductor
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RAYCHEM |
SMD |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
TE/泰科 |
2420+ |
/ |
127845 |
一級代理,原裝正品! |
詢價 | ||
SMCCorporation |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
ON |
24+ |
90000 |
詢價 | ||||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
ON/安森美 |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價 | ||
ON/安森美 |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢價 | ||
ON/安森美 |
23+ |
TO |
13000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
24+ |
N/A |
76000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
RAYCHEM |
24+ |
SMD |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 |
