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MGV12N120D中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MGV12N120D
廠商型號

MGV12N120D

功能描述

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

文件大小

79.92 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-12 8:50:00

MGV12N120D規(guī)格書詳情

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost.

? High Power Surface Mount D3PAK Package

? High Speed Eoff: 160 J/A typical at 125°C

? High Short Circuit Capability – 10 s minimum

? Soft Recovery Free Wheeling Diode is included in the package

? Robust High Voltage Termination

產(chǎn)品屬性

  • 型號:

    MGV12N120D

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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