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MJE182

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage—:VCEO(SUS)=80V ·DCCurrentGain—:hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE172 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE182

ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE182

PNPPLASTICPOWERTRANSISTORS

MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

MJE182

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE182

LowPowerAudioAmplifierLowCurrentHighSpeedSwitchingApplications

LowCurrentHighSpeedSwitchingApplications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE182

3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60-80VOLTS12.5WATTS

3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60–80VOLTS12.5WATTS ...designedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. ?Collector–EmitterSustainingVoltage— VCEO(sus)=60Vdc—MJE171,MJE181 VCEO(sus)=80Vdc—MJE172,MJE182

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE182

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE172(PNPtype)andMJE182(NPNtype)aresiliconepitaxialplanar,complementarytransistorsinJedecSOT-32plasticpackage,theyaredesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARY

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE182

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features ?Collector?EmitterSustainingVoltage? VCEO(sus)=40Vdc?MJE170,MJE180 =60Vdc?MJE171,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE182

POWERTRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE182

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE182

COMPLEMENTARYSILICONPOWERTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE182

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJE182

SILICONCOMPLEMENTRYPOWERTRANSISTOR

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE182G

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features ?Collector?EmitterSustainingVoltage? VCEO(sus)=40Vdc?MJE170,MJE180 =60Vdc?MJE171,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE182G

ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE182G

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MPA-182

L1PASSIVEGPSMICROSTRIPANTENNA

Description Ourpatchantennaofferingsareperfectforprojectswithasmallerscopeandbudgetforwhichhigh-performanceandlowerweightisnotaprimaryfactorforconsiderationfortheantenna.Theyareidealforlessdemandingapplicationswhereextremeperformanceandbatterylifecanbe

MAXTENA

Maxtena Inc.

MRF182

RFPOWERFETTRANSISTOR

DESCRIPTION: TheASIMRF182isanRFpowerfieldeffecttransistor,N-ChannelEnhancement-ModelateralMOSFET. FEATURESINCLUDE: ?BradbandperformancefromHFto1GHz ?Omnigold?MetalizationSystem ?HighGain,Ruggeddevice.

ASI

Advanced Semiconductor

MRF182

LATERALN-CHANNELBROADBANDRFPOWERMOSFETs

?HighGain,RuggedDevice ?BroadbandPerformancefromHFto1GHz ?BottomSideSourceEliminatesDCIsolators,ReducingCommonModeInductances

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF182S

LATERALN-CHANNELBROADBANDRFPOWERMOSFETs

?HighGain,RuggedDevice ?BroadbandPerformancefromHFto1GHz ?BottomSideSourceEliminatesDCIsolators,ReducingCommonModeInductances

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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