MHV5IC1810NR2RF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

Final Application

? Typical Two-Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 Watts Avg., Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)

Power Gain — 29 dB

Power Added Efficiency — 29

IMD — -34 dBc

Driver Application

? Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105 mA, IDQ2 = 95 mA, Pout = 35 dBm, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)

Power Gain — 29 dB

Spectral Regrowth @ 400 kHz Offset = -67 dBc

Spectral Regrowth @ 600 kHz Offset = -76 dBc

EVM — 1.1 rms

? Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW Output Power

? Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW Pout.

Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters

? On-Chip Matching (50 Ohm Input, >5 Ohm Output)

? Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

? On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)

? Integrated ESD Protection

? RoHS Compliant

? In Tape and Reel. R2 Suffix = 1500 Units per 16 mm, 13 inch Reel.