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MM5313

DIGITALCLOCKS

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

MM5313N

DIGITALCLOCKS

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

MS5313

HIGHRELIABILITYCURRENTREGULATORDIODES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MUN5313DW

DUALBIASRESISTORTRANSISTORNPN&PNPWITHMONOLITHICBIASRESISTORNETWORK

DESCRIPTION TheBRT(BiasResistorTransistor)containsasingle transistorwithamonolithicbiasnetworkconsisting oftworesistors;aseriesbaseresistoranda baseemitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternal resistorbiasnetwor

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

MUN5313DW

DualBiasResistorTransistors

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

MUN5313DW

DualBiasResistorTransistorNPNPNPSilicon

DualBiasResistorTransistor NPN+PNPSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

MV5313

HIGHRELIABILITYCURRENTREGULATORDIODES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MX5313

HIGHRELIABILITYCURRENTREGULATORDIODES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NTE5313

SinglePhaseBridgeRectifier8Amp

Features: ●LowForwardVoltageDrop ●SurgeOverloadRating:200A(Peak) ●MountingHoleThrufor#6Screw

NTE

NTE Electronics

NX5313

1310nmFORFTTHPONAPPLICATIONInGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5313Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=13.0mW ?Lowthresholdcurrentlth=6mA ?Differentia

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5313

1310nmInGaAsPMQWFPLASERDIODEINCANPACKAGEFORFTTHPONAPPLICATIONS

CEL

California Eastern Labs

NX5313EH

1310nmInGaAsPMQWFPLASERDIODEINCANPACKAGEFORFTTHPONAPPLICATIONS

CEL

California Eastern Labs

NX5313EH

1310nmFORFTTHPONAPPLICATIONInGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5313Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=13.0mW ?Lowthresholdcurrentlth=6mA ?Differentia

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5313EK

1310nmFORFTTHPONAPPLICATIONInGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5313Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=13.0mW ?Lowthresholdcurrentlth=6mA ?Differentia

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5313EK

1310nmInGaAsPMQWFPLASERDIODEINCANPACKAGEFORFTTHPONAPPLICATIONS

CEL

California Eastern Labs

PM5313

SONET/SDHPAYLOADEXTRACTOR/ALIGNERFOR622MBIT/S

PMC

PMC-Sierra, Inc

PM5313

SONET/SDHPayloadExtractor/Alignerfor622Mbit/sInterfaces

DESCRIPTION ThePM5313SONET/SDHPAYLOADEXTRACTOR/ALIGNER(SPECTRA-622)terminatesthetransportandpathoverheadofSTS-12(STM-4/AU3orSTM-4/AU4)andSTS-12c(STM-4-4c)streamsat622.08Mbit/s.TheSPECTRA-622implementssignificantfunctionsforaSONET/SDHcompliantlineinterface,aswe

PMC

PMC-Sierra, Inc

PM5313

SONET/SDHPayloadExtractor/Alignerfor622Mbit/sInterfaces

PMC

PMC-Sierra, Inc

PM5313-BI

SONET/SDHPAYLOADEXTRACTOR/ALIGNERFOR622MBIT/S

PMC

PMC-Sierra, Inc

SI5313-C

IRED

AUK

AUK corp

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Micrel
24+
10-TMLFreg
5000
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Micrel
23+
10-TMLF
7750
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MICREL
23+
NA
13650
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Micrel
24+
10-TMLF
28500
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23+
13000
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18+
9800
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MICROCHIP/微芯
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10LUDFN2x2
6600
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MICROCHIP/微芯
2023+
10LUDFN2x2
80000
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Microchip
1940+
N/A
2782
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9854
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更多MIC5313-GGYMTTR供應(yīng)商 更新時(shí)間2025-1-11 10:01:00