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MIMXRT117HDVMAA

i.MX RT1170 Crossover Processors Data Sheet for Consumer Products

1.1Features Thei.MXRT1170processorsarebasedonArmCortex?-M7Core?Platform,whichhasthefollowing features: ?TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MIMXRT117HDVMAA

i.MX RT1170 Crossover Processors Data Sheet for Consumer Products

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MJD117

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. ?LowCollector-EmitterSaturationVoltage. ?StraightLead(IPAK,LSuffix) ?ComplementarytoMJD112/L.

KECKEC CORPORATION

KEC株式會社

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

MJD117

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularTIP117

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD117

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

MJD117

ComplementarypowerDarlingtontransistors

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

MJD117

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117

TRANSISTOR(PNP)

FS

First Silicon Co., Ltd

MJD117

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD117

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?HighDCcurrentgain ?Built-inadamperdiodeatE-C ?Leadformedforsurfacemountapplications(NOsuffix) ?Straightlead(IPAK,“－I”suffix) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designe

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP117. Applications Mediumpowerswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MJD117

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

Continental Device India Limited

MJD117

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

SiliconPNPPowerTransistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

SiliconPNPPowerTransistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117G

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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NXP
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