首頁 >MISC-710CRBR>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
DCto4GHzAmplifier | AEROFLEX Aeroflex Circuit Technology | AEROFLEX | ||
PNPGeneralPurposeAmplifierTransistorSurfaceMount PNPGeneralPurposeAmplifierTransistorSurfaceMount | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
SMTVoltageControlledOscillator | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成電路河北博威集成電路有限公司 | BOWEI | ||
3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SupportsCaviumCN1005acceleratoronboard | AXIOMTEKAxiomtek Co., Ltd. 艾訊科技艾訊股份有限公司 | AXIOMTEK | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細參數(shù)
- 型號：
MISC-710CRBR
- 制造商：
Lanner Electronics Inc
- 功能描述：
MISC;C710 CROSS BAR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
5000 |
公司存貨 |
詢價 | ||||
MOT |
23+ |
BGA |
9526 |
詢價 | |||
SIPEX |
24+ |
原廠封裝 |
1 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON/安森美 |
23+ |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
QUALCOMM |
20+ |
射頻元件 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Portwell |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
24+ |
MODULE |
2176 |
公司大量現(xiàn)貨 隨時可以發(fā)貨 |
詢價 | |||
BARUN |
1716+ |
? |
6500 |
只做原裝進口,假一罰十 |
詢價 | ||
GOODSKY/國興 |
1736+ |
DIP |
8529 |
專營繼電器只做原裝正品假一賠十! |
詢價 | ||
GOODSKY |
2021+ |
DIP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
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