零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MJ11032G | High??urrent Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
MJ11032G | High-Current Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
MJ11032G | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-204AE 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN DARL 120V 50A TO204 | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
PVCandNylonLEDSpacers | HeycoHeyco. ???/span> | Heyco | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
EMI/EMCFILTER Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A ?ComplementtothePNPMJ11033 APPLICATIONS ?Designedforuseasoutputdevicesincomplementary generalpurposeamplifierappl | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司 | ZSELEC | ||
High-CurrentComplementarySiliconPowerTransistors High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
High-CurrentComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A ?ComplementtoTypeMJ11033 APPLICATIONS ?Designedforuseasoutputdevicesincomplementary generalpurposeamplifierapplica | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
High??urrentComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
COMPLEMENTARYDARLINGTONPOWERTRANSISTOR FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde | SEME-LAB Seme LAB | SEME-LAB | ||
NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS) SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS | WINGSWing Shing Computer Components 永盛電子永盛電子(香港)有限公司 | WINGS | ||
POWERTRANSISTOR(50A,60-120V,300W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導體股份有限公司 | MOSPEC | ||
COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ? | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
Intellimod??ModuleApplicationSpecificIPM(4Amperes/600Volts) INTEGRATEDFUNCTIONSANDFEATURES ?Converterbridgefor3phaseAC-to-DCpowerconversion. ?3phaseIGBTinverterbridgeconfiguredbythelatest3rd.generationIGBTanddiodetechnology. INTEGRATEDDRIVE,PROTECTIONANDSYSTEMCONTROLFUNCTIONS: ?P-SideIGBTs:Drivecircuit,high-level-s | POWEREX Powerex Power Semiconductors | POWEREX | ||
PatchLead-CAT5E PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
Pushbuttonswitch,sideactuation,illumination | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS | ||
Pushbuttonswitch,sideactuation,illumination | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號:
MJ11032G
- 制造商:
onsemi
- 類別:
分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 晶體管類型:
NPN - 達林頓
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
3.5V @ 500mA,50A
- 電流 - 集電極截止(最大值):
2mA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
1000 @ 25A,5V
- 工作溫度:
-55°C ~ 200°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-204AE
- 供應(yīng)商器件封裝:
TO-204(TO-3)
- 描述:
TRANS NPN DARL 120V 50A TO204
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
10+ |
CAN |
62000 |
原裝正品現(xiàn)貨優(yōu)勢18 |
詢價 | ||
ON |
22+ |
TO-3 |
5560 |
ON專賣店,品質(zhì)保證 |
詢價 | ||
onsemi |
24+ |
TO-204AE |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
ON |
23+ |
TO-3 |
8000 |
原裝正品,假一罰十 |
詢價 | ||
ON |
24+ |
TO-3 |
14950 |
詢價 | |||
ON(安森美) |
2023+ |
TO-3 |
4550 |
全新原裝正品 |
詢價 | ||
ON/安森美 |
23+ |
TO-3-2 |
9048 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價 | ||
ON/安森美 |
23+ |
TO-3-2 |
13316 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
ONSEMI/安森美 |
2410+ |
80000 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價 | |||
ON(安森美) |
23+ |
TO-3 |
9344 |
公司只做原裝正品,假一賠十 |
詢價 |
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