首頁 >MJD45H11>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

MJD45H11

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD45H11

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD45H11

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications ?LoadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK:“-I”Suffix) ?ElectricallySimilartoPopularMJE45H ?FastSwitchingSpeeds ?LowCollect

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJD45H11

isc Silicon PNP Power Transistors

DESCRIPTION ?LowCollector-EmitterSaturationVoltage:VCE(sat)=1.0V(Max)@IC=8A ?FastSwitchingSpeeds ?ComplementtoTypeMJD44H11 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designedfor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD45H11

Gate Driver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

Powerex Power Semiconductors

MJD45H11

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

80 V, 8 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Ele

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD45H11

isc Silicon PNP Power Transistors

DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=-1.0V(Max)@IC=-8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD44H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinap

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD45H11

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●FastSwitchingSpeeds ●ComplementaryPairsSimplifiesDesigns ●Pb?FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

MJD45H11

Complementary power transistors

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD45H11

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

Designed for general purpose power and switching

RECTRON

Rectron Semiconductor

MJD45H11

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11

COMPLEMENTARY SILICON PNP TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD45H11

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11-001

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11-1

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD45H11-1G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號：

    MJD45H11

  • 功能描述：

    兩極晶體管 - BJT 8A 80V 20W PNP

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應商型號品牌批號封裝庫存備注價格
Nexperia(安世)
23+
TO-252
3022
原廠訂貨渠道,支持BOM配單一站式服務
 詢價
ON
23+
TO-252
8860
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ON/安森美
20+原裝正品
TO-252
6000
大量現(xiàn)貨,免費發(fā)樣。
 詢價
ON
22+
TO252
10000
原裝正品優(yōu)勢供應
 詢價
ON/安森美
24+
TO-252
211
只做原廠渠道 可追溯貨源
 詢價
ON
1123
TO-252
255
原裝庫存有訂單來談優(yōu)勢
 詢價
on
23+
TO252/DPAK
3500
原廠原裝正品
 詢價
SMG
2021+
IPAK
6800
原廠原裝,歡迎咨詢
 詢價
CJ/長晶
24+
TO-252-2L
30000
長晶全系列二三極管原裝優(yōu)勢供應,歡迎詢價
 詢價
ON(安森美)
2023+
N/A
4550
全新原裝正品
 詢價
更多MJD45H11供應商 更新時間2025-1-11 14:45:00

相關規(guī)格書

更多

相關庫存

更多