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MJB45H11T4

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4

ComplementaryPowerTransistors

ComplementaryPowerTransistors D2PAKforSurfaceMount Complementarypowertransistorsareforgeneralpurposepoweramplificationandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,convertersandpoweramplifiers. Features ?LowCollector?EmitterSatu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD45H11T4

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4

Complementarypowertransistors

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD45H11T4-A

Complementarypowertransistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    MJD45H11T4G-CUT TAPE

  • 制造商：

    ON

  • 功能描述：

    MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
22+
TO-252
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
ON/安森美
0720+
TO-252-2
15
就找我吧!--邀您體驗愉快問購元件!
 詢價
ON/安森美
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
2122+
TO252
28920
全新原裝正品現(xiàn)貨,優(yōu)勢渠道可含稅,假一賠十
 詢價
ON/安森美
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ON/安森美
22+
TO-252
50000
原裝正品.假一罰十
 詢價
ON/安森美
2023+
TO-252
20000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
ON/安森美
22+
TO-252
2000
原廠原包裝。假一罰十?？砷_13%增值稅發(fā)票。
 詢價
ON/安森美
252
11
24
詢價
ON/安森美
24+
TO252
98000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
更多MJD45H11T4G-CUT TAPE供應(yīng)商 更新時間2025-1-4 14:50:00

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