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MJE803

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803

SILICON NPN POWER DARLINGTON TRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJE803

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE803

Monolithic Construction With Built-in Base- Emitter Resistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE803

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE803

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE803

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE803

Plastic Darlington Complementary Silicon Power Transistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJE803

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導體

MJE803

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

MJE803

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803

包裝：散裝 封裝/外殼：TO-225AA，TO-126-3 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN DARL 80V 4A TO126

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803G

Plastic Darlington Complementary Silicon Power Transistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

MJE803T

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage—:V(BR)CEO=80V ?DCCurrentGain—:hFE=750(Min)@IC=2A ?ComplementtoTypeMJE703T APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE803G

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803G

包裝：管件 封裝/外殼：TO-225AA，TO-126-3 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN DARL 80V 4A TO126

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803STU

包裝：管件 封裝/外殼：TO-225AA，TO-126-3 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN DARL 80V 4A TO126-3

ONSEMION Semiconductor

安森美半導體安森美半導體公司

晶體管資料

  • 型號：

    MJE803

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-N+Darl+Di

  • 性質(zhì)：

    低頻或音頻放大 （LF）_開關管 （S）_功率放大 （L

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    80V

  • 最大電流允許值：

    4A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BD263A,BD679,BD779,FD50B,2N6039,

  • 最大耗散功率：

    40W

  • 放大倍數(shù)：

    β>750

  • 圖片代號：

    B-21

  • vtest：

    80

  • htest：

    999900

  • atest：

    4

  • wtest：

    40

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MJE803

  • 制造商：

    onsemi

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    散裝

  • 晶體管類型：

    NPN - 達林頓

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    2.8V @ 40mA，2A

  • 電流 - 集電極截止（最大值）：

    100μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    750 @ 2A，3V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-225AA，TO-126-3

  • 供應商器件封裝：

    TO-126

  • 描述：

    TRANS NPN DARL 80V 4A TO126

供應商型號品牌批號封裝庫存備注價格
ON
24+
N/A
2500
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ST/ON
1738+
TO-126
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
ON
23+
TO-126
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
FAIRC
2023+
TO-126
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
FAIRC
2020+
TO-126
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ON/安森美
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
 詢價
ON
24+
TO-126
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
MOTOROLA/摩托羅拉
23+
TO-225AATO-126
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
22+
TO126
20000
保證原裝正品,假一陪十
 詢價
更多MJE803供應商 更新時間2024-12-23 16:00:00

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