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ML5805DM-T

5.8GHzVariableDataRateFSKTransceiverwithIntegratedPA

RFMD

RF Micro Devices

MSK5805EDU

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805EDU

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

MSK

M.S. Kennedy Corporation

MSK5805EDUG

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805HRH

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805HRH

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

MSK

M.S. Kennedy Corporation

MSK5805HRHG

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805KRH

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805KRH

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

MSK

M.S. Kennedy Corporation

MSK5805KRHG

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805RH

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

MSK5805RH

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

MSK

M.S. Kennedy Corporation

MSK5805RHG

RADHARDULTRALOWDROPOUTADJUSTABLEPOSITIVELINEARREGULATOR

ANARENAnaren Microwave

安倫

NTD5805N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=51A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NTD5805N

PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTD5805N

PowerMOSFET40V,51A,SingleN??hannel,DPAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTD5805NG

PowerMOSFET40V,51A,SingleN??hannel,DPAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTE5805

NTE5800thruNTE5809AxialLeadStandardRecoverySiliconRectifiers,3Amp,DO27

Description: TheNTE5800throughNTE5809siliconrectifiersaredesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NTE

NTE Electronics

NVD5805N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=51A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NVD5805N

PowerMOSFET40V,51A,SingleN.Channel,DPAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應商型號品牌批號封裝庫存備注價格
RFMD
23+
N/A
50000
全新原裝現貨熱賣
詢價
RFMD
16+
SMD
2875
只做進口原裝現貨!或訂貨!假一賠十!
詢價
RFMD
2018+
SMD
5500
長期供應原裝現貨實單可談
詢價
RFMD
22+
假一賠十
28600
只做原裝正品現貨假一賠十一級代理
詢價
RFMD
24+
SMD
1500
原裝現貨假一賠十
詢價
RFMD
2021+
NA
3000
十年專營原裝現貨,假一賠十
詢價
RFMD
0931+
假一賠十
15
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
RFMD
NA
5500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
RFMD
假一賠十
899933
集團化配單-有更多數量-免費送樣-原包裝正品現貨-正規(guī)
詢價
RFMD
23+
2515
原廠原裝正品
詢價
更多ML5805DM-SB供應商 更新時間2024-11-18 16:28:00