MLD1N06CLT4G分立半導(dǎo)體產(chǎn)品的晶體管-特殊用途規(guī)格書PDF中文資料

MLD1N06CLT4G屬于分立半導(dǎo)體產(chǎn)品的晶體管-特殊用途。由安森美半導(dǎo)體公司制造生產(chǎn)的MLD1N06CLT4G晶體管 - 特殊用途特殊用途晶體管系列產(chǎn)品屬于分立晶體管或晶體管陣列，帶有或不帶有附加的集成無源元件和內(nèi)部連接，可用于或經(jīng)調(diào)整用于某些狹窄或特定的用途，例如電流鏡、平衡串聯(lián)電容器組或負(fù)載切換。

SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N?Channel DPAK

The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in?rush current or a shorted load condition could occur.

This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate?Source clamping for ESD protection and integral Gate?Drain clamping for over?voltage protection and Sensefet technology for low on?resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate?Source and Gate?Drain clamps allow the device to be applied without use of external transient suppression components. The Gate?Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate?Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

Features

? Pb?Free Package is Available