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MMBT2907FW

GeneralPurposeTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT2907-G

GENERALPURPOSETRANSISTORS

Features -Epitaxialplanardieconstruction -Deviceisdesignedasageneralpurposeamplifierandswitching.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

MMBT2907L

PNPGeneralPurposeTransistor

GeneralPurposeTransisters PNPSilicon Features ?Pb?FreePackagesareAvailable

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT2907Q

GeneralPurposeTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT2907W

PNPSiliconEpitaxialPlanarMediumPowerTransistor

PNPSiliconEpitaxialPlanarMediumPowerTransistor forswitchingandamplifierapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

MMDT2907A

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features&Benefits ?ComplementaryPairsOne2222AType(NPN) ?One2907AType(PNP) ?IdealforLowPowerAmplificationandSwitching ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3)

DIODES

Diodes Incorporated

MMDT2907A

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT2907A

DualNPNSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT2222A. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

MMDT2907A

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT2907A

DUALPNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE60VoltsPOWER150mW FEATURES ?PNPepitaxialsilicon,planardesign ?Collector-emittervoltageVCE=-60V ?CollectorcurrentIC=-600mA ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

MMDT2907A

PNPSiliconMulti-ChipTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMDT2907A

PNPGeneralPurposeAmplifier

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?ComplementaryNPNTypeavailableMMDT2222A ?Capableof200mWattsofPd,600mAcontinuouscollectorcurrent. ?OperatingandStorageJunctionTemperatures:-55°Cto150°C ?Epoxyme

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT2907A

NPN&PNPGENERALPURPOSEAMPLIFIER

DESCRIPTION TheUTCMMDT2907AisanDualPNPgeneralpurposeamplifier.it’ssuitableforamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友順友順科技股份有限公司

MMDT2907A

PNPGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMDT2907A

DUALTRANSISTOR(PNPPNP)

SOT-363Plastic-EncapsulateTransistors FEATURE ●ComplementaryNPNTypeavailableMMDT2222A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

MMDT2907A

DualPNPSmallSignalSurfaceMountTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

MMDT2907A

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

MMDT2907A

60VDUALPNPSMALLSIGNALTRANSISTOR

DIODES

Diodes Incorporated

MMDT2907A

Plastic-EncapsulateTransistors

FEATURES ComplementaryPNPTypeavailableMMDT29222A

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

MMDT2907A

DualPNPSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT2222A. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

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PANJIT
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23+
SOT-23
12000
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SOT-323
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4800
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ON/ONSemiconductor/安森
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SOT-323
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ON
2020+
SOT-323
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ONS
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6528
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更多MMBT2907AW-PEC供應(yīng)商 更新時(shí)間2024-12-27 12:12:00

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