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MMBT2907FW

GeneralPurposeTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT2907-G

GENERALPURPOSETRANSISTORS

Features -Epitaxialplanardieconstruction -Deviceisdesignedasageneralpurposeamplifierandswitching.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

MMBT2907L

PNPGeneralPurposeTransistor

GeneralPurposeTransisters PNPSilicon Features ?Pb?FreePackagesareAvailable

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT2907Q

GeneralPurposeTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT2907W

PNPSiliconEpitaxialPlanarMediumPowerTransistor

PNPSiliconEpitaxialPlanarMediumPowerTransistor forswitchingandamplifierapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

MMDT2907A

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features&Benefits ?ComplementaryPairsOne2222AType(NPN) ?One2907AType(PNP) ?IdealforLowPowerAmplificationandSwitching ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3)

DIODES

Diodes Incorporated

MMDT2907A

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT2907A

DualNPNSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMDT2222A. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

MMDT2907A

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMDT2907A

DUALPNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE60VoltsPOWER150mW FEATURES ?PNPepitaxialsilicon,planardesign ?Collector-emittervoltageVCE=-60V ?CollectorcurrentIC=-600mA ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

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粵晶高科
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2022
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更多MMBT2907AWIC供應(yīng)商 更新時(shí)間2025-3-1 14:20:00

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