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MMDF1N05E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MMDF1N05E
廠商型號(hào)

MMDF1N05E

功能描述

DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

文件大小

169.56 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 12:37:00

MMDF1N05E規(guī)格書(shū)詳情

Medium Power Surface Mount Products

TMOS Dual N-Channel Field Effect Transistors

MiniMOS? devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

? Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

? Logic Level Gate Drive — Can Be Driven by Logic ICs

? Miniature SO–8 Surface Mount Package — Saves Board Space

? Diode Is Characterized for Use In Bridge Circuits

? Diode Exhibits High Speed

? Avalanche Energy Specified

? Mounting Information for SO–8 Package Provided

? IDSS Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    MMDF1N05E

  • 制造商:

    MOTOROLA

  • 制造商全稱:

    Motorola, Inc

  • 功能描述:

    DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

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