MMDJ-65608EV-30-E中文資料愛特梅爾數(shù)據(jù)手冊PDF規(guī)格書

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 μA) with a fast access time at 30 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML.

Features

? Operating Voltage: 5V

? Access Time: 30, 45 ns

? Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 μW (Typ)

– Data Retention: 0.5 μW (Typ)

? Wide Temperature Range: -55°C to +125°C

? 400 Mils Width Packages: FP32 and SB32

? TTL Compatible Inputs and Outputs

? Asynchronous

? Single 5V Supply

? Equal Cycle and Access Time

? Gated Inputs:

– No Pull-up/down

– Resistors Are Required

? QML Q and V with SMD 5962-89598

? ESCC B with Specification 9301/047