| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MMG | METALLIZED POLYESTER FILM CAPACITORS | RubyconRUBYCON CORPORATION 紅寶石 | Rubycon | |
POWERLUX IGBT ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtectionZenerDiode ?IndustryStandardPackage(SOT223) ?HighSpeedEoff:Typic | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
Gallium Arsenide CATV Integrated Amplifier Module Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Gallium Arsenide CATV Integrated Amplifier Module Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Gallium Arsenide CATV Integrated Amplifier Module Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
Gallium Arsenide CATV Integrated Amplifier Module Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Gallium Arsenide CATV Integrated Amplifier Module Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
650V 100A Three Level Inverter Module PRODUCTFEATURES □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □650VIGBTCHIP(Trench+FieldStoptechnology) □Lowswitchinglossesandshorttailcurrent □Lowsaturationvoltageandpositivetemperaturecoefficient APPLICATIONS □SolarApplicat | MACMICMacmic Science&Technology Co.,Ltd. 宏微科技江蘇宏微科技股份有限公司 | MACMIC | ||
GALLIUM ARSENIDE CATV INTEGRATED AMPLIFIER MODULE Description ?24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features ?Specifiedfor79–,112–and132–ChannelLoading ?ExcellentDistortionPerformance ?HigherOutputCapability ?Built–inInputDiodeProtection ?GaAsFETTransistorTechnology ?U | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
Gallium Arsenide CATV Integrated Amplifier Module Description ?24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?HigherOutputCapability ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?U | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Indium Gallium Phosphorus HBT IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. ?26.5dBmP1dB@2450MHz ?PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) ?HighGain,HighEfficiencyandHighLinearity ?EVM=3Typ@Pout=+1 | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Indium Gallium Phosphorus HBT - WLAN Power Amplifier IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. ?26.5dBmP1dB@2450MHz ?PowerGain:27.5dBTyp(@f=2450M | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Indium Gallium Phosphorus HBT IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. ?26.5dBmP1dB@2450MHz ?PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) ?HighGain,HighEfficiencyandHighLinearity ?EVM=3Typ@Pout=+1 | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
1200V 25A Six-Pack Module PRODUCTFEATURES □SolderContactTechnology,Ruggedmountingduetointegrated Mountingclamps □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □SubstrateforLowThermalResistance □Lowsaturationvoltageandpositivetemperaturecoefficient □Fast | MACMICMacmic Science&Technology Co.,Ltd. 宏微科技江蘇宏微科技股份有限公司 | MACMIC | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itis | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) 40-3600MHz,20dB21dBmInGaPHBT BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicatio | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale |
詳細(xì)參數(shù)
- 型號(hào)：
MMG
- 制造商：
RUBYCON
- 制造商全稱：
RUBYCON CORPORATION
- 功能描述：
METALLIZED POLYESTER FILM CAPACITORS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
89 |
本站現(xiàn)庫(kù)存 |
詢價(jià) | ||||
FRESS |
08+ |
SOT89 |
10 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大發(fā)貨 |
詢價(jià) | ||
FREESCALE |
17+ |
SOT89 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
FREESCALESEMICONDUCTOR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
FREESCALE |
23+ |
SOT89 |
12000 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
MACMIC |
23+ |
模塊 |
200 |
原裝正品,假一罰十 |
詢價(jià) | ||
FREESCALE |
16+ |
SOT-89 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FREESCALE |
2339+ |
BGA |
5632 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
NA |
24+ |
NA |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
Freescale |
1716+ |
? |
6500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) |
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