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MMP60R290P

600V 0.29(ohm) N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMP60R290PTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMP60R290PC

600V 0.29(ohm) N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

600V 0.29(ohm) N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PTH

600V 0.29(ohm) N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MME60R290QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13.8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MME60R290QRH

600V0.29ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMFT60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMFT60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

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更多MMP60R290P供應(yīng)商 更新時(shí)間2025-1-1 9:50:00