MMS1X1H中文資料多維科技數(shù)據(jù)手冊PDF規(guī)格書

Features and Benefits

? Tunneling Magnetoresistance (TMR) Technology

? Ultra Low Power Consumption at 1.5μA

? High Frequency Response up to 1kHz

? Bipolar Latching Operation

? Low Operate Points for High Sensitivity

? Compatible with a Wide Range of Supply Voltages

? Excellent Thermal Stability

? High Tolerance to External Magnetic Field Interference

Applications

? Utility Meters including

Water, Gas, and Heat Meters

? Solid State Switches

? Speed Sensing

? Rotary and Linear Position

Sensing

General Description

The MMS1X1H is a digital bipolar magnetic switch that integrates TMR and CMOS

technology in order to provide a magnetically triggered digital switch with high sensitivity, high

speed, and ultra-low power consumption. It integrates a push-pull half-bridge TMR magnetic sensor

and CMOS signal processing circuitry within the same package. Designed for use in applications

that are both power-critical and performance-demanding, this device includes an on-chip TMR

voltage generator for precise magnetic sensing, TMR voltage amplifier and comparator, a Schmitt

trigger to provide switching hysteresis for noise rejection, and CMOS push-pull output. An internal

band gap regulator is used to provide temperature compensated supply voltage for internal circuits,

and it allows a wide range of operating supply voltages. The MMS1X1H draws only 1.5μA

resulting in ultra-low power operation, additionally it has fast response, accurate switching points,

excellent thermal stability, and immunity to stray field interference. It is available in two packaging

form factors: SOT23-3 (P/N MMS1X1HS), or TO-92S (P/N MMS1X1HT).