MOCD211R2M中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

These devices consist of two gallium arsenide infrared emitting

diodes optically coupled to two monolithic silicon phototransistor

detectors, in a surface mountable, small outline, plastic package. They

are ideally suited for high?density applications, and eliminate the need

for through?the?board mounting.

Features

? Closely Matched Current Transfer Ratios

? Minimum BVCEO of 70 V Guaranteed

– MOCD207M, MOCD208M, MOCD213M

? Minimum BVCEO of 30 V Guaranteed

– MOCD211M, MOCD217M

? Low LED Input Current Required for Easier Logic Interfacing

– MOCD217M

? Convenient Plastic SOIC?8 Surface Mountable Package Style, with

0.050″ Lead Spacing

? Safety and Regulatory Approvals:

– UL1577, 2,500 VACRMS for 1 Minute

– DIN?EN/IEC60747?5?5, 565 V Peak Working Insulation Voltage

? These are Pb?Free Devices

Applications

? Feedback Control Circuits

? Interfacing and Coupling Systems of Different Potentials and

Impedances

? General Purpose Switching Circuits

? Monitor and Detection Circuits