MPDIOOA中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
MPDIOOA規(guī)格書詳情
DESCRIPTION/FEATURES
□ HermeticallySealed Glass Packages (DO-35)
□ High Reverse Breakdown and Low Leakage
□ Excellent Low VoltageRegulation
□ Controlled Stored Charge
□ Planar Passivated Die Elements
APPLICATION
These axial lead diodes represent configurations of one to four* p-n junctions in series which may be used in any application requiring light tolerance, low voltage levels versus current. This method of low voltage regulation is comparitively superior in dynamic impedence (voltage change versus current) than low voltage zeners where tunneling instead of avalanche current is dominant. Typical applications include use as signal limiters, level shifters in transistor logic, meter protectors, and low voltage regulators. For computer circuit applications, a controlled stored charge selection is provided as well.
In addition, these devices may be used for temperature compensation wherein each p-n junction contributes approximately -2 mV/°C each.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
73000 |
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MurataEl |
23+ |
3000 |
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Murata Power Solutions |
23+ |
SMD |
50000 |
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詢價(jià) | ||
MEISHUO(美碩) |
23+ |
插件,10.2x20.5mm |
6000 |
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詢價(jià) | ||
MURATA |
mokuai |
68900 |
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詢價(jià) | |||
TI |
新 |
48 |
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詢價(jià) | |||
24+ |
5000 |
公司存貨 |
詢價(jià) | ||||
MURATA/村田 |
23+ |
SIPDIP |
10000 |
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詢價(jià) | ||
MURATA/村田 |
18+ |
SMD |
288000 |
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詢價(jià) | ||
Murata |
1941+ |
N/A |
909 |
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