MPQ1918GQE-AEC1中文資料美國芯源數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The MPQ1918 is designed to drive

enhancement mode Gallium Nitride (GaN)

FETs or N-channel MOSFETs with a low gate

threshold voltage in a half-bridge or

synchronous application.

The MPQ1918 features independent high-side

(HS) and low-side (LS) pulse-width modulation

(PWM) inputs. It also provides a bootstrap

technique for the HS driver voltage, and can

operate up to 100V. The new charging

technology prevents the HS driver voltage from

exceeding the VCC voltage (VCC), which

prevents the gate voltage from exceeding the

GaN FET’s maximum gate-to-source voltage

rating.

The MPQ1918 has two separate gate outputs,

allowing the turn-on and turn-off capabilities to

be independently adjusted by adding an

impedance to the gate loop. The MPQ1918 can

operate up to several MHz.

The MPQ1918 is available in a FCQFN-14

(3mmx3mm) package with wettable flanks.

FEATURES

? Independent High-Side (HS) and Low-Side

(LS) TTL Logic Inputs

? HS Floating Biased Voltage Rail Operates

Up to 100VDC

? Separate Gate Outputs for Adjustable TurnOn and Turn-Off Capabilities

? Internal Bootstrap Switch Supply Voltage

Clamping

? 3.7V to 5.5V VCC Voltage (VCC) Range

? 0.27? / 1.2? Pull-Down/Pull-Up Resistance

? Fast Propagation Times

? Excellent Propagation Delay Matching

(Typically 1.5ns)

? Available in an FCQFN-14 (3mmx3mm)

Package with Wettable Flanks

? Available in AEC-Q100 Grade 1

APPLICATIONS

? Half-Bridge and Full-Bridge Converters

? Audio Class-D Amplifiers

? Synchronous Buck Converters

? Power Modules