MPQ1923GRE-AEC1中文資料美國(guó)芯源數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The MPQ1923-AEC1 is a high-frequency, Nchannel

MOSFET, half-bridge gate driver. The

device’s low-side MOSFET (LS-FET) and highside

MOSFET (HS-FET) driver channels are

controlled independently, and are matched with

<5ns in time delay.

In the case of an insufficient supply, the device’s

HS-FET and LS-FET under-voltage lockout

(UVLO) protection forces the outputs low. The

MPQ1923-AEC1 also features an integrated

bootstrap (BST) diode to reduce the external

component count.

The MPQ1923-AEC1 is available in QFN-10

(4mmx4mm) and QFN-8 (4mmx4mm)

packages.

FEATURES

? Drives an N-Channel MOSFET Half-Bridge

? Low Dropout with 4.5V Under-Voltage

Lockout (UVLO) Falling Threshold

? 120V Bootstrap Voltage (VBST) Range

? On-Chip Bootstrap Diode

? 20ns Typical Propagation Delay

? 8A Sink Current, 7A Source Current at 12V

VDD

? <5ns Gate Driver Matching Time Delay

? Drives a 1nF Load with 7.2ns Rise Time

(tRISE) and 5.5ns Fall Time (tFALL) at 12V VDD

? TTL-Compatible Input

? <300μA Quiescent Current (IQ)

? UVLO Protection for the HS-FET and

LS-FET Gate Drivers

? Available in QFN-10 (4mmx4mm) and

QFN-8 (4mmx4mm) Packages

? Available in AEC-Q100 Grade 1

APPLICATIONS

? Motor Drivers

? Telecom Half-Bridge Power Supplies

? Avionics DC/DC Converters

? Two-Switch Forward Converters

? Active-Clamp Forward Converters