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NDL7910P

1480nmEDFAAPPLICATIONInGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE

DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

1550nmCWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=20mWMIN. ?WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

1310nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7603PSeriesisa1310nmphase-shiftedDFB(distributedfeedback)laserdiodemodulewithsinglemodefiber.TheMultipleQuantumWell(st-MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverawidetemperaturerangeof-40to+85°C.It

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

1550nmOPTICALFIBERCOMMUNICATIONSEAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULEFOR2.5Gb/sULTRALONG-REACHAPPLICATIONS

DESCRIPTION TheNDL7910PisanEAmodulatorintegrated1550nmDFB-LDfor2.5Gb/s.ThenewlydevelopedbandgapenergycontrolledSelectiveMOVPEtechnologyisutilizedasfabricationmethod.Itisdesignedfor2.5Gb/sultralongreachapplications. FEATURES ?Integratedelectroabsorptionmodu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

CWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULEFORD-WDMAPPLICATIONS

DESCRIPTION TheNX8563LBSeriesisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealforD-WDMtransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=10mWMIN. ?Wavelengthavailabilityλp=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

1550nmOPTICALFIBERCOMMUNICATIONSInGaAsPSTRAINEDMQWDFBDC-PBHLASERDIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

1510nmOPTICALFIBERCOMMUNICATIONSInGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE

DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7705PSeriesisa1550nmphase-shiftedDFB(DistributedFeed-Back)laserdiodemodulewithopticalisolator.MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof40to+85C. Itisdesig

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NDL7910P

LASERDIODE

1550nmOPTICALFIBERCOMMUNICATIONS EAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULE FOR2.5Gb/sULTRALONG-REACHAPPLICATIONS FEATURES ?Integratedelectroabsorptionmodulator ?Lowmodulationvoltage ?WavelengthselectableforITU-Tstandards ?14-pinbutterflypackage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NDL7910PC

1550nmOPTICALFIBERCOMMUNICATIONSEAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULEFOR2.5Gb/sULTRALONG-REACHAPPLICATIONS

DESCRIPTION TheNDL7910PisanEAmodulatorintegrated1550nmDFB-LDfor2.5Gb/s.ThenewlydevelopedbandgapenergycontrolledSelectiveMOVPEtechnologyisutilizedasfabricationmethod.Itisdesignedfor2.5Gb/sultralongreachapplications. FEATURES ?Integratedelectroabsorptionmodu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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更多MR7910A-LF供應(yīng)商 更新時(shí)間2025-2-19 9:58:00

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