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MRF18060AR3中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MRF18060AR3
廠商型號

MRF18060AR3

功能描述

RF POWER FIELD EFFECT TRANSISTORS

文件大小

405.18 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-7 10:20:00

MRF18060AR3規(guī)格書詳情

The RF MOSFET Line

RF Power Field Effect TransistorsThe RF MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz.

? Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)

Power Gain — 13 dB (Typ) @ 60 Watts

Efficiency — 45 (Typ) @ 60 Watts

? Internally Matched, Controlled Q, for Ease of Use

? High Gain, High Efficiency and High Linearity

? Integrated ESD Protection

? Designed for Maximum Gain and Insertion Phase Flatness

? Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power

? Excellent Thermal Stability

? Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

? Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

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