MRF19090R3中文資料飛思卡爾數(shù)據(jù)手冊PDF規(guī)格書

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

? Typical CDMA Performance: 1990 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9 Watts Avg.

Power Gain — 10 dB

Adjacent Channel Power —

885 kHz: -47 dBc @ 30 kHz BW

1.25 MHz: -55 dBc @ 12.5 kHz BW

2.25 MHz: -55 dBc @ 1 MHz BW

? Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power

Features

? Internally Matched for Ease of Use

? High Gain, High Efficiency and High Linearity

? Integrated ESD Protection

? Designed for Maximum Gain and Insertion Phase Flatness

? Excellent Thermal Stability

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.