| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications. ?TypicalW-CDMAPerformancefor2140MHz,28Volts4.096MHzBW | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistors TheRFSub–MicronMOSFETLineRFPowerFieldEffectTransistorsN–ChannelEnhancement–ModeLateralMOSFETs DesignedforW–CDMAbasestationapplicationsatfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications. ?TypicalW–CDMAPerformancefor214 | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF Power Field Effect Transistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications. ?TypicalW-CDMAPerformancefor2140MHz,28Volts4.096MHzBW | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
RF Power Field Effect Transistor 2110-2170MHz,120W,28VLATERALN-CHANNELRFPOWERMOSFET DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications. ?W-CDM | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
SILICON NPN RF POWER TRANSISTOR DESCRIPTION: TheMRF227isdesignedforlargesignalpoweramplifierapplicationsoperatingto225MHz | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF234isDesignedforLarge-SignalAmplifierApplicationsto100MHz. FEATURES: ?CommonEmitter ?Omnigold?MetalizationSystem ?PG=9.5dBmin.at25W/90MHz | ASI Advanced Semiconductor | ASI | ||
SILICON NPN RF POWER TRANSISTOR DESCRIPTION: TheMRF237isdesignedforlargesignalpoweramplifierapplicationsoperatingto225MHz | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheMRF238isDesignedfor13.6VFMLarge-SignalAmplifierApplicationsto175MHz. | ASI Advanced Semiconductor | ASI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF240AisDesignedforClassCAmplifierApplicationsinVHFMobileRadios. FEATURES: ?PG=9.0dBMin.at40W/160MHz ?ηC=55Min.at40W/160MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor TheMRF247isdesignedfor12.5VoltVHFlarge–signalamplifierapplicationsinindustrialandcommercialFMequipmentoperatingto175MHz. ?Specified12.5Volt,175MHzCharacteristics— OutputPower=75Watts PowerGain=7.0dBMin E | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
甚高頻 （VHF）_TR
- 封裝形式：
直插封裝
- 極限工作電壓：
36V
- 最大電流允許值：
0.4A
- 最大工作頻率：
220MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BFR36,BLW11,3DA21A,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
C-40
- vtest：
36
- htest：
220000000
- atest：
0.4
- wtest：
1
詳細(xì)參數(shù)
- 型號：
MRF2
- 制造商：
Ferraz Shawmut
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BEL |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
MICROCHIP |
12MODULE |
3200 |
原裝長期供貨! |
詢價 | |||
FREESCALE |
05/06+ |
36 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | |||
MOTO |
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
MOT |
23+ |
CAN3 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Microchip |
23+ |
Module |
11923 |
詢價 | |||
TI |
2020+ |
TSSOP30 |
30000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
24+ |
400 |
本站現(xiàn)庫存 |
詢價 | ||||
MOTOROLA |
24+ |
TO-63 |
4650 |
詢價 | |||
MicrochipTechnology |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價 |
