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MRF421

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF421isDesignedforHighlinearamplifierapplicationsfrom2.0to30MHZ. FEATURES: ?PG=12dBmin.at100W/30MHz ?IMD3=-30dBcmax.at100W(PEP) ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

MRF421

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz

Designedprimarilyforapplicationasahigh-powerlinearamplifierfrom2.0to30MHz. ●Specified12.5V,30MHzcharacteristics— Outputpower=100W(PEP) Minimumgain=10dB Efficiency=40 ●Intermodulationdistortion@100W(PEP)—IMD=-30dB(min.) ●100testedforload

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MRF421

NPN Silicon RF Power Transistor

TheRFLine ???????NPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@

ELEFLOW

eleflow technologies co., ltd.

MRF422

NPN Silicon RF power transistor

Description: MRF422isdesignedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. Features: Specified28Volt,30MHzCharacteristics OutputPower=150W(PEP),MinimumGain=10dB,Efficiency=40 IntermodulationDistortion@150W(PEP),IMD=–30d

ELEFLOW

eleflow technologies co., ltd.

MRF422

RF POWER TRANSISTORS NPN SILICON

TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified28Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@150W(P

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF422

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF422isDesignedfor2.0MHzto30MHz,28VHighPowerLinearAmplifierApplications.ForhFEMatchedPairsOrderASIMRF422MP.

ASI

Advanced Semiconductor

MRF422

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified28V,30MHzcharacteristics— Outputpower=150W(PEP) Minimumgain=10dB Efficiency=40 ?Intermodulationdistortion@150W(PEP)—IMD=–30dB(min.) ?100testedforloadm

MA-COM

M/A-COM Technology Solutions, Inc.

MRF422

The RF Line NPN Silicon RF Power Transistor

TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. ?Specified28Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=10dB Efficiency=40 ?IntermodulationDistortion@150W(P

MACOM

Tyco Electronics

MRF422MP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF422isDesignedfor2.0MHzto30MHz,28VHighPowerLinearAmplifierApplications.ForhFEMatchedPairsOrderASIMRF422MP.

ASI

Advanced Semiconductor

MRF426

RF POWER TRANSISTOR NPN SILICON

TheRFLine NPNSiliconRFPowerTransistor ...designedforhighgaindriverandoutputlinearamplifierstagesin1.5to30MHzHF/SSBequipment. ?Specified28Volt,30MHzCharacteristics— OutputPower=25W(PEP) MinimumGain=22dB Efficiency=35 ?IntermodulationDisto

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

晶體管資料

  • 型號:

    MRF401

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質:

    調幅 (AM)_功率放大 (L)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    3.3A

  • 最大工作頻率:

    30MHZ

  • 引腳數(shù):

    4

  • 可代換的型號:

    BLX13,BLY93A,3DA30D,

  • 最大耗散功率:

    25W

  • 放大倍數(shù):

  • 圖片代號:

    G-127

  • vtest:

    30

  • htest:

    30000000

  • atest:

    3.3

  • wtest:

    25

詳細參數(shù)

  • 型號:

    MRF4

  • 制造商:

    Ferraz Shawmut

供應商型號品牌批號封裝庫存備注價格
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更多MRF4供應商 更新時間2025-3-31 9:37:00