MRF7S21110H分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to

2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN--PCS/cellular radio and WLL

applications.

? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

1100 mA, Pout = 33 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01

Probability on CCDF.

Power Gain ? 17.3 dB

Drain Efficiency ? 32.5

Device Output Signal PAR ? 6.1 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset ? --38 dBc in 3.84 MHz Channel Bandwidth

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW

Peak Tuned Output Power

? Pout @ 1 dB Compression Point ? 110 Watts CW

Features

? 100 PAR Tested for Guaranteed Output Power Capability

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? Internally Matched for Ease of Use

? Integrated ESD Protection

? Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

? Designed for Digital Predistortion Error Correction Systems

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.