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MRF7S35120HS分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

MRF7S35120HS
廠商型號(hào)

MRF7S35120HS

參數(shù)屬性

MRF7S35120HS 封裝/外殼為NI-780S;包裝為卷帶(TR);類別為分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻;產(chǎn)品描述:FET RF 65V 3.5GHZ NI-780S

功能描述

RF Power Field Effect Transistor

封裝外殼

NI-780S

文件大小

777.56 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡(jiǎn)稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 23:00:00

MRF7S35120HS規(guī)格書詳情

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

? Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA,

Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,

Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain ? 12 dB

Drain Efficiency ? 40

Rise Time ? 6 ns

Fall Time ? 6 ns

? Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA,

Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts,

7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01

Probability on CCDF

Power Gain ? 13 dB

Drain Efficiency ? 16

RCE ? --33 dB (EVM ? 2.2 rms)

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak

Power

? Capable of Handling 3 dB Overdrive @ 32 Vdc

Features

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? Internally Matched for Ease of Use

? Qualified Up to a Maximum of 32 VDD Operation

? Integrated ESD Protection

? Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    MRF7S35120HSR5

  • 制造商:

    NXP USA Inc.

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻

  • 包裝:

    卷帶(TR)

  • 晶體管類型:

    LDMOS

  • 頻率:

    3.1GHz ~ 3.5GHz

  • 增益:

    12dB

  • 功率 - 輸出:

    120W

  • 封裝/外殼:

    NI-780S

  • 供應(yīng)商器件封裝:

    NI-780S

  • 描述:

    FET RF 65V 3.5GHZ NI-780S

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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