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MRF837

NPN SILICON RF LOW POWER TRANSISTOR

DESCRIPTION: TheASIMRF837isDesignedprimerilyforwidebandlargesignalpredriverstagesin800MHzandUHFfrequencyranges. FEATURESINCLUDE: ?Mingain8.0dB@750mW/870MHz ?SiliconNitridepassivated ?LowcostPlasticPackage

ASI

Advanced Semiconductor

MRF8372

Marking：8372；Package：SO-8；RF LOW POWER TRANSISTOR NPN SILICON

TheRFLine NPNSiliconRFLowPowerTransistor Designedprimarilyforwidebandlargesignalpredriverstagesin800MHzandUHFfrequencyranges. ?Specified@12.5V,870MHzCharacteristics OutputPower=750mW MinimumGain=8.0dB Efficiency60(Typ) ?State–of–the–ArtTechno

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF8372

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION:Designedprimarilyforwidebandlargesignalstagesinthe800MHzandUHFfrequencyranges. Features ?Specified@12.5V,870MHzcharacteristics ?OutputPower=750mW ?MinimumGain=8.0dB ?Efficiency60Typical ?CostEffectiveSO-8package

ADPOW

Advanced Power Technology

MRF8372

NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION: TheASIMRF8372isDesignedforWidebandlargesignalstagesinthe800MHzandUHFfrequencyranges. FEATURES: ?POUT=750mW ?PG=8.0dBmin. ?η=60typical ?R1suffix–TapeandReel,500units ?R2suffix–TapeandReel,2500units

ASI

Advanced Semiconductor

MRF8372G

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION:Designedprimarilyforwidebandlargesignalstagesinthe800MHzandUHFfrequencyranges. Features ?Specified@12.5V,870MHzcharacteristics ?OutputPower=750mW ?MinimumGain=8.0dB ?Efficiency60Typical ?CostEffectiveSO-8package

ADPOW

Advanced Power Technology

MRF8372R1

RF LOW POWER TRANSISTOR NPN SILICON

TheRFLine NPNSiliconRFLowPowerTransistor Designedprimarilyforwidebandlargesignalpredriverstagesin800MHzandUHFfrequencyranges. ?Specified@12.5V,870MHzCharacteristics OutputPower=750mW MinimumGain=8.0dB Efficiency60(Typ) ?State–of–the–ArtTechno

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF8372R2

RF LOW POWER TRANSISTOR NPN SILICON

TheRFLine NPNSiliconRFLowPowerTransistor Designedprimarilyforwidebandlargesignalpredriverstagesin800MHzandUHFfrequencyranges. ?Specified@12.5V,870MHzCharacteristics OutputPower=750mW MinimumGain=8.0dB Efficiency60(Typ) ?State–of–the–ArtTechno

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF8372G

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 16V 870MHZ 8SO

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MRF8372GR1

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 16V 870MHZ 8SO

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MRF8372GR2

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 16V 870MHZ 8SO

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MRF837

  • 制造商：

    Motorola Inc

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    RF POWER TRANSISTOR BIPOLAR/HBT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOTOROLA/摩托羅拉
23+
1688
房間現(xiàn)貨庫(kù)存:QQ:373621633
 詢價(jià)
ON/ONSemiconductor/安森
24+
SMD
8200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
MOTOROLA
13+
SMD-4
17838
原裝分銷
 詢價(jià)
MOTOROLA
1725+
3256
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
KODENSHI原裝
22+23+
SMD-4
30001
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
KODENSHI
1701+
SMD-4
8956
只做原裝現(xiàn)貨、主營(yíng)光電元器件/門市現(xiàn)貨
 詢價(jià)
MOTOROLA/摩托羅拉
24+
194
現(xiàn)貨供應(yīng)
 詢價(jià)
MOTOROLA/摩托羅拉
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
MOTOROLA/摩托羅拉
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MOTOROLA/摩托羅拉
2022
SMD
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多MRF837供應(yīng)商 更新時(shí)間2025-1-20 10:32:00

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