MRF904

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: DesignedprimarilyforuseINHighGain,lownoisegeneralpurposeamplifiers. Features ?SiliconNPN,highFrequency,To-72packaged,Transistor ?HighPowerGain-GU(max)=11dB(typ)@f=450MHz 7dB(typ)@f=1GHz ?Low

MRF904

NPN SILICON RF TRANSISTOR

DESCRIPTION: TheASIMRF904isDesignedforGeneralPurposeAmplifierApplications. FEATURES: ?NF=1.5dB(Typ)450MHz ?Gmax=16dB(Typ)450MHz ?fT=4.0GHz(Typ)@IC=15mA

MRF904

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: DesignedprimarilyforuseinHighGain,lownoisegeneral-purposeamplifiers. Features ?SiliconNPN,highFrequency,To-72packaged,Transistor ?HighPowerGain-GU(max):11dB(typ)@f=450MHz 7dB(typ)@f=1GHz ?Lo

MRF904

Package：TO-206AF，TO-72-4 金屬罐；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 15V 4GHZ TO72

MRF9045

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MRF9045LR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicati

MRF9045LSR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicati

MRF9045M

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MRF9045MBR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour

MRF9045MR1

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistor N–ChannelEnhancement–ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge–signal,common–sour